Numero ng Bahagi : | SI5509DC-T1-GE3 |
---|---|
Tagagawa / Brand : | Electro-Films (EFI) / Vishay |
Paglalarawan : | MOSFET N/P-CH 20V 6.1A 1206-8 |
Katayuan ng RoHs : | Lead libreng / RoHS compliant |
Available ang Dami | 5622 pcs |
Mga Datasheet | SI5509DC-T1-GE3.pdf |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Supplier aparato Package | 1206-8 ChipFET™ |
serye | TrenchFET® |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 5A, 4.5V |
Power - Max | 4.5W |
packaging | Tape & Reel (TR) |
Package / Kaso | 8-SMD, Flat Lead |
operating Temperature | -55°C ~ 150°C (TJ) |
Salalayan Type | Surface Mount |
Ang Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Libreng Status / Katayuan ng RoHS | Lead free / RoHS Compliant |
Input Kapasidad (Ciss) (Max) @ Vds | 455pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
Type FET | N and P-Channel |
FET Tampok | Logic Level Gate |
Alisan ng tubig sa Source Boltahe (Vdss) | 20V |
Detalyadong Paglalarawan | Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™ |
Current - Ang patuloy Drain (Id) @ 25 ° C | 6.1A, 4.8A |
Numero ng Base Bahagi | SI5509 |